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| Directed Energy, Inc. An DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. Unless noted, specifications are for each output device Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS (1) (1) Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 Tc = 25C, Derate 6.0W/C above 25C Tc = 25C Maximum Ratings 1000 1000 20 30 6 48 6 20 5 >200 750 5.0 0.17 -55...+150 150 -55...+150 V V V V A A A mJ V/ns V/ns W W K/W C C C C g SG1 SD1 SD2 SG2 GATE 1 GATE 2 DRAIN 1 DRAIN 2 Features PDAMB * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances RthJHS (1) TJ TJM Tstg TL Weight Symbol Test Conditions 1.6mm (0.063 in) from case for 10 s 300 4 Characteristic Values TJ = 25C unless otherwise specified Advantages * High Performance Push-Pull RF Package min. VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C TJ = 125C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 100 V nA 1000 2.5 * Optimized for RF and high speed switching at frequencies to >100MHz * Easy to mount--no insulators needed * High power density Note: All specifications are per each transistor, unless otherwise noted. (1) 50 A 1 mA 2.5 2 6 S Thermal specifications are for the package, not per transistor Directed Energy, Inc. An DE275X2-102N06A RF Power MOSFET IXYS Company Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Symbol min. RG Ciss Coss Crss Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM (1) IF = IS, -di/dt = 100A/s, VR = 100V VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. 0.3 1800 100 30 3 2 4 5 50 20 30 max. pF pF pF ns ns ns ns nC nC nC Characteristic Values (TJ = 25C unless otherwise specified) Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% min. typ. max. 6 48 1.5 A A V ns C A 200 0.6 4 These parameters apply to the package, not individual MOSFET devices. For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on DEI's web site at www.directedenergy.com/apptech.htm Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 Directed Energy, Inc. An DE275X2-102N06A RF Power MOSFET IXYS Company 102N06A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Rd Lg 20 GATE Doff Roff D1crs D2crs 5 Ron Don 6 8 1 M3 3 Dcos Rds 2 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 2.0 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.7 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS Doc #9200-0224 Rev 2 (c) 2001 Directed Energy, Inc. Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com |
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